The point-contact transistor originated from the persistent investigation of semiconductors by Walter Houser Brattain, John Bardeen, and William Shockley. Born in 1902 in Xiamen, China, Brattain pursued an academic path in the United States that led to a foundational role at Bell Telephone Laboratories, where he spent his career advancing the understanding of surface states and solid-state physics.
Early Education and Academic Foundation
Brattain grew up in Washington state, attending Queen Anne High School and Tonasket High School before enrolling at Whitman College. He graduated in 1924 with a double major in physics and mathematics. He continued his academic training at the University of Oregon, earning an M.A. in 1926, and completed his Ph.D. at the University of Minnesota in 1929, where he studied quantum mechanics under John Van Vleck and wrote a thesis on electron impact under John T. Tate.
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Following a short tenure at the National Bureau of Standards, Brattain joined Bell Telephone Laboratories in 1929. Working alongside Joseph A. Becker, he conducted experiments on thermionic emission and rectification in cuprous oxide and silicon. These studies regarding the photo-effect at semiconductor surfaces were significant contributions to solid-state physics. During World War II, his research shifted toward the National Defense Research Committee, where he developed magnetometers to detect submerged vessels, securing a patent for his design in 1944.
The Invention of the Transistor
In 1945, Bell Labs established a fundamental research group in solid-state physics. Brattain, Bardeen, and Shockley focused on replacing unreliable vacuum tubes with semiconductor amplifiers. In late 1947, Brattain and Bardeen analyzed the failure of earlier field-effect designs, concluding that surface states trapped charge carriers. On December 16, 1947, Brattain successfully demonstrated amplification using two gold leaf contacts on a germanium surface. On December 23, the team presented the first functional point-contact transistor to their colleagues.
Professional Recognition and Later Years
Brattain shared the 1956 Nobel Prize in Physics with Bardeen and Shockley for their collaborative development of the transistor. His technical achievements earned him memberships in organizations such as the National Academy of Sciences, the American Physical Society, and the American Academy of Arts and Sciences. He was also honored with the Stuart Ballantine Medal, the John Scott Award, and the Richtmyer Memorial Lecture Award. After his research career, he held an appointment at Whitman College. He died in 1987 in Seattle and is buried in Pomeroy City Cemetery.
Fast facts
- Born: 1902, Xiamen
- Died: 1987, Seattle
- Citizenship: United States
- Education: University of Oregon, University of Minnesota, Whitman College
- Major Award: Nobel Prize in Physics (1956)
- Invention: Point-contact transistor
- Burial site: Pomeroy City Cemetery
Questions readers ask
What was Brattain's primary contribution to physics?
He is recognized for his experimental work in solid-state physics, specifically the discovery of the photo-effect at semiconductor surfaces and the invention of the point-contact transistor.
Did he work alone on the transistor?
No, he collaborated with John Bardeen and William Shockley at Bell Labs, demonstrating the device to colleagues in 1947.
Achievements
- Nobel Prize in Physics — 1956
- Held posts at Whitman College
- Educated at Queen Anne High School, Tonasket High School and University of Minnesota
- Fields of research: physics
